2011. 3. 18 1/3 semiconductor technical data KTD1047B triple diffused npn transistor revision no : 0 high power amplifier application. features h complementary to ktb817b. h recommended for 60w audio frequency amplifier output stage. maximum rating (ta=25 ? ) to-3p(n)-e c g l k r a d b h f i d pp t j q 1 2 3 m n o e a millimeters dim b c d d e f g h i j k l o n p q m 19.90 0.20 2.00 0.20 1.00 0.20 3.00 0.20 3.80 0.20 3.50 0.20 13.90 0.20 12.76 0.20 23.40 0.20 1.5+0.15-0.05 16.50 0.30 1.40 0.20 13.60 0.20 9.60 0.20 5.45 0.30 r t 0.60+0.15-0.05 15.60 0.20 + _ 4.80 0.20 + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ 3.20 0.10 + _ 18.70 0.20 + _ 1. base 2. collector (heat sink) 3. emitter electrical characteristics (ta=25 ? ) note : h fe (1) classification o:60 q 120, y:100 q 200 characteristic symbol rating unit collector-base voltage v cbo 160 v collector-emitter voltage v ceo 140 v emitter-base voltage v ebo 6 v collector current dc i c 12 a pulse i cp 15 collector power dissipation (tc=25 ? ) p c 100 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =80v, i e =0 - - 0.1 ma emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 ma dc current gain h fe (1) (note) v ce =5v, i c =1a 60 - 200 h fe 2 v ce =5v, i c =6a 20 - collector-emitter saturation voltage v ce(sat) i c =5a, i b =0.5a - - 2.5 v base-emitter voltage v be(on) v ce =5v, i c =1a - - 1.5 v transition frequency f t v ce =5v, i c =1a - 15 - mhz output capacitance c ob v cb =10v, i e =0, f=1mhz - 210 - pf turn on time t on v cc =20v i c =1a=10 h i b1 =-10 h i b2 r l =20 ? - 0.26 - s fall time t f - 0.68 - storage time t stg - 6.88 -
2011. 3. 18 2/3 KTD1047B revision no : 0 0 c base-emitter voltage v (v) i - v collector current i (a) be 0 i - v cce ce collector emitter voltage v (v) 0 c 0 collector current i (a) 2 v - i be(sat) c c collector current i (a) 0.1 0.3 3 1 0.1 be(sat) base-emitter saturation dc current h 1 fe 3 1 0.3 0.1 collector current i (a) c c fe h - i transition frequency f (mhz) 1 t 13 0.3 0.1 collector current i (a) c c t f - i 10 20 30 40 50 4 6 8 10 240ma 200ma 160ma 120ma 80ma 40ma 20ma i =0 b collector current i (a) v - i ce(sat) c collector-emitter voltage 0.1 0.01 0.3 1 c 10 30 100 3 5 10 30 50 100 300 500 1k v (v) 35 10 0.03 0.05 0.1 0.3 0.5 1 3 5 10 v =5v ce i /i =10 c b ce(sat) voltage v (v) 10 0.3 0.5 1 3 5 10 i /i =10 c b be c 0.4 0.8 1.2 1.6 1 2 3 4 5 6 7 8 v =5v ce 10 3 5 10 30 50 100 v =5v ce 0.5 0.5 5 0.5 5
2011. 3. 18 3/3 KTD1047B revision no : 0 collector current i (a) c 0.1 30 10 3 1 collector-emitter voltage v (v) ce safe operating area collector-base voltage v (v) c (pf) 1 ob 10 3 30 100 c - v ob cb cb 10 30 50 100 300 500 1k f=1mhz 100 300 1 k 0.3 0.5 1 3 5 10 30 50 100 1ms 10ms 100ms dc collector output capacitance
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